Substrate processing apparatus and substrate processing method

ABSTRACT

A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, and an interface block. An exposure device is arranged adjacent to an interface block. The interface block comprises a drying processing group including two drying processing units and an interface transport mechanism. After a substrate is subjected to exposure processing by the exposure device, the substrate is transported to the drying processing units in the drying processing group by the interface transport mechanism, where the substrate is subjected to cleaning and drying processings.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to substrate processing apparatuses andsubstrate processing methods for applying processing to substrates.

2. Description of the Background Art

A substrate processing apparatus is used to apply a variety ofprocessings to substrates such as semiconductor substrates, substratesfor use in liquid crystal displays, plasma displays, optical disks,magnetic disks, magneto-optical disks, photomasks, and other substrates.

Such a substrate processing apparatus typically applies a plurality ofsuccessive processings to a single substrate. The substrate processingapparatus as described in JP 2003-324139 A comprises an indexer block,an anti-reflection film processing block, a resist film processingblock, a development processing block, and an interface block. Anexposure device is arranged adjacent to the interface block as anexternal device separate from the substrate processing apparatus.

In the above-described substrate processing apparatus, a substrate iscarried from the indexer block into the anti-reflection film processingblock and the resist film processing block, where the formation of ananti-reflection film and resist film coating processing are applied tothe substrate. The substrate is then carried to the exposure devicethrough the interface block. After exposure processing has been appliedto the resist film on the substrate by the exposure device, thesubstrate is transported to the development processing block through theinterface block. In the development processing block, developmentprocessing is applied to the resist film on the substrate to form aresist pattern thereon, and the substrate is subsequently carried intothe indexer block.

With recent improvements in the density and integration of devices,making finer resist patterns have become very important. Conventionalexposure devices typically perform exposure processing by providingreduction projection of a reticle pattern on a substrate through aprojection lens. With such conventional exposure devices, however, theline width of an exposure pattern is determined by the wavelength of thelight source of an exposure device, thus making it impossible to make aresist pattern finer than that.

For this reason, a liquid immersion method is suggested as a projectionexposure method allowing for finer exposure patterns (refer to, e.g.,WO99/49504 pamphlet). In the projection exposure device according to theWO99/49504 pamphlet, a liquid is filled between a projection opticalsystem and a substrate, resulting in a shorter wavelength of exposurelight on a surface of the substrate. This allows for a finer exposurepattern.

However, in the projection exposure device according to theaforementioned WO99/49504 pamphlet, exposure processing is performedwith the substrate and the liquid being in contact with each other.Accordingly, the substrate to which the liquid adheres is carried out ofthe exposure device. Thus, when combining the substrate processingapparatus according to the aforementioned JP 2003-324139 A with theexposure device using the liquid immersion method as described in theaforementioned WO99/49504 pamphlet as an external device, the liquidadhering to the substrate that has been carried out of the exposuredevice may drop in the substrate processing apparatus, causingoperational troubles such as abnormalities in the electric system of thesubstrate processing apparatus.

There is also a possibility that the substrate is contaminated by, e.g.,residual droplets after the exposure processing and the eluate from anorganic film on the substrate, causing processing defects in thesubstrate in subsequent processing steps.

SUMMARY OF THE INVENTION

It is an object of the present invention to provide a substrateprocessing apparatus and a substrate processing method in whichoperational troubles due to a liquid attached to substrates in anexposure device are prevented.

Another object of the present invention is to provide a substrateprocessing apparatus in which processing defects in substrates due tothe contamination after exposure processing are prevented.

(1)

A substrate processing apparatus according to one aspect of the presentinvention that is arranged adjacent to an exposure device comprises aprocessing section for applying processing to a substrate, and aninterface for exchanging the substrate between the processing sectionand the exposure device, wherein the processing section includes a firstprocessing unit that applies a processing liquid to the substrate, andthe interface includes a second processing unit that dries the substrateafter exposure processing by the exposure device and a transport devicethat transports the substrate between the processing unit, the exposuredevice, and the second processing unit.

In the substrate processing apparatus, the processing liquid is appliedto the substrate by the first processing unit, after which the substrateis transported to the exposure device by the transport device. Thesubstrate is subjected to the exposure processing by the exposuredevice, and then transported to the second processing unit in theinterface by the transport device. The substrate is subjected to dryingprocessing by the second processing unit. The substrate that has beensubjected to the drying processing is transported to the processingsection by the transport device.

In this way, the substrate after the exposure processing is dried by thesecond processing unit in the interface, and then transported to theprocessing section. This prevents a liquid attached to the substrate inthe exposure device from dropping in the substrate processing apparatus.As a result, the substrate processing apparatus can be prevented fromoperational troubles.

In addition, the components of the processing liquid on the substratecan be reliably prevented from eluting in the liquid remaining on thesubstrate. As a result, an exposure pattern formed on the substrate canbe prevented from deformation.

(2)

The second processing unit may dry the substrate by supplying an inertgas onto the substrate. The use of the inert gas prevents a chemicalinfluence upon a film on the substrate while allowing the substrate tobe dried reliably.

(3)

The interface may further include a third processing unit that appliesgiven processing to the substrate and a platform on which the substrateis temporarily mounted, and the transport device may include a firsttransport unit that transports the substrate between the processingunit, the third processing unit, and the platform, and a secondtransport unit that transports the substrate between the platform, thesecond processing unit, and the exposure device, and wherein the secondtransport unit may transport the substrate from the exposure device tothe second processing unit.

In this case, after the application of the processing liquid to thesubstrate by the first processing unit in the processing section, thesubstrate is transported to the third processing unit by the firsttransport unit in the interface. The substrate is subjected to the givenprocessing by the third processing unit, and then transported onto theplatform by the first transport unit.

After this, the substrate is transported to the exposure device from theplatform by the second transport unit. The substrate is subjected to theexposure processing by the exposure device, and then transported to thesecond processing unit from the exposure device by the second transportunit in the interface.

The substrate is dried in the second processing unit, and thentransported onto the platform by the second transport unit. Then, thesubstrate is transported to the processing section from the platform bythe first transport unit.

In this way, the substrate after the exposure processing is dried by thesecond processing unit in the interface, and then transported onto theplatform. This prevents a liquid attached to the substrate in theexposure device from dropping in the substrate processing apparatus. Asa result, the substrate processing apparatus can be prevented fromoperational troubles.

(4)

The second transport unit may comprise a first holder and a secondholder each for holding the substrate, wherein the second transport unitmay hold the substrate with the first holder when transporting thesubstrate before exposure processing by the exposure device, and thesecond transport unit may hold the substrate with the second holder whentransporting the substrate after exposure processing by the exposuredevice.

In this way, the first holder is used when transporting the substrate towhich no liquid is attached before the exposure processing, while thesecond holder is used when transporting the substrate to which a liquidis attached after the exposure processing. Therefore, no liquid attachesto the first holder, which prevents a liquid from attaching to thesubstrate before the exposure processing. This prevents contamination ofthe substrate due to the attachment of particles and the like in theatmosphere. As a result, the occurrence of processing defects in theexposure device due to degradation in the resolution performance and thelike can be prevented.

(5)

The second holder may be provided below the first holder. In this case,even if a liquid drops from the second holder and the substrate held onthe second holder, the liquid will not attach to the first holder andthe substrate held on the first holder. This reliably prevents a liquidfrom attaching to the substrate before the exposure processing.

(6)

The third processing unit may include an edge exposure unit forsubjecting a peripheral portion of the substrate to exposure. In thiscase, the peripheral portion of the substrate is subjected to exposureby the edge exposure unit.

(7)

The second processing unit may further clean the substrate before dryingthe substrate.

In this case, even if a liquid attaches to the substrate duringexposure, and particles and the like in the atmosphere attach to thesubstrate during the transport of the substrate from the exposure deviceto the second processing unit, the deposits can be removed reliably.This prevents the substrate from processing defects reliably.

(8)

The second processing unit may further comprise a substrate holdingdevice that holds the substrate substantially horizontally, arotation-driving device that rotates the substrate held on the substrateholding device about an axis vertical to the substrate, a cleaningliquid supplier that supplies a cleaning liquid onto the substrate heldon the substrate holding device, and an inert gas supplier that suppliesan inert gas onto the substrate after the cleaning liquid has beensupplied onto the substrate by the cleaning liquid supplier.

In the second processing unit, the substrate is held on the substrateholding device substantially horizontally, and the substrate is rotatedabout the axis vertical to the substrate by the rotation-driving device.Then, the cleaning liquid is supplied onto the substrate from thecleaning liquid supplier, followed by the supply of the inert gas fromthe inert gas supplier.

In this case, since the substrate is rotated as the cleaning liquid issupplied onto the substrate, the cleaning liquid on the substrate ismoved toward the peripheral portion of the substrate by the centrifugalforce, and splashed away. Accordingly, the deposits of particles and thelike removed by the cleaning liquid can be reliably prevented fromremaining on the substrate. In addition, since the substrate is rotatedas the inert gas is supplied onto the substrate, the cleaning liquidremaining on the substrate after the cleaning of the substrate isefficiently removed. In this way, the deposits of particles and the likecan be reliably prevented from remaining on the substrate while thesubstrate can be dried reliably. Accordingly, after the exposure, thecomponents of the processing liquid on the substrate can be reliablyprevented from eluting in the cleaning liquid remaining on thesubstrate. As a result, the exposure pattern formed on the substrate canbe reliably prevented from deformation.

(9)

The inert gas supplier may supply the inert gas so that the cleaningliquid supplied onto the substrate from the cleaning liquid supplier isremoved from the substrate as the cleaning liquid moves outwardly fromthe center of the substrate.

This prevents the cleaning liquid from remaining on the center of thesubstrate, which prevents reliably the generation of dry marks (drystains) on a surface of the substrate. Also, after the exposure, thecomponents of the processing liquid on the substrate can be reliablyprevented from eluting in the cleaning liquid remaining on thesubstrate. Accordingly, the exposure pattern formed on the substrate canbe reliably prevented from deformation.

(10)

The second processing unit may further comprise a rinse liquid supplierthat supplies a rinse liquid onto the substrate after the supply of thecleaning liquid from the cleaning liquid supplier and before the supplyof the inert gas from the inert gas supplier.

This allows the cleaning liquid to be reliably cleaned away by the rinseliquid, making it possible to prevent the deposits of particles and thelike from remaining on the substrate more reliably.

(11)

The inert gas supplier may supply the inert gas so that the rinse liquidsupplied onto the substrate from the rinse liquid supplier is removedfrom the substrate as the rinse liquid moves outwardly from the centerof the substrate.

This prevents the rinse liquid from remaining on the center of thesubstrate, which prevents the generation of dry marks on the surface ofthe substrate reliably. In addition, after the exposure, the componentsof the processing liquid can be reliably prevented from eluting in therinse liquid remaining on the substrate. Accordingly, the exposurepattern formed on the substrate can be prevented from deformation morereliably.

(12)

A substrate processing method according to another aspect of the presentinvention, for processing a substrate in a substrate processingapparatus that is arranged adjacent to an exposure device and comprisesa processing section that includes a first processing unit and aninterface that includes a transport device and a second processing unit,comprises the steps of applying a processing liquid to the substrate bythe first processing unit in the processing section, transporting thesubstrate from the processing section to the exposure device by means ofthe transport device in the interface, transporting the substrate afterexposure processing by the exposure device to the second processing unitby means of the transport device in the interface, drying the substrateby the second processing unit in the interface, and transporting thesubstrate dried by the second processing unit in the interface to theprocessing section by means of the transport device.

In the substrate processing method, the processing liquid is applied tothe substrate by the first processing unit in the processing section.After this, the substrate is transported to the exposure device by thetransport device in the interface. The substrate that has been subjectedto the exposure processing by the exposure device is transported to thesecond processing unit in the interface by the transport device, wherethe substrate is dried. The dried substrate is transported to theprocessing section by the transport device.

In this way, the substrate after the exposure processing is dried firstby the second processing unit in the interface, so that a liquidattached to the substrate in the exposure device can be prevented fromdropping in the substrate processing apparatus. As a result, thesubstrate processing apparatus can be prevented from operationaltroubles.

In addition, after the exposure, the components of the processing liquidon the substrate can be reliably prevented from eluting in the liquidremaining on the substrate. As a result, the exposure pattern formed onthe substrate can be prevented from deformation.

(13)

The method may further comprise the step of cleaning the substrate bythe second processing unit, after the step of transporting the substrateto the second processing unit by means of the transport device andbefore the step of drying the substrate by the second processing unit.

In this case, the substrate after the exposure is cleaned by the secondprocessing unit. Therefore, even if a liquid attaches to the substrateduring the exposure, and particles and the like in the atmosphere attachto the substrate during the transport of the substrate from the exposuredevice to the second processing unit, the deposits can be removedreliably. Accordingly, the substrate can be prevented from processingdefects reliably.

(14)

A substrate processing apparatus according to still another aspect ofthe present invention that is arranged adjacent to an exposure devicecomprises a processing section for applying processing to a substrate,and an interface for exchanging the substrate between the processingsection and the exposure device, wherein the processing section includesa first processing unit that applies a processing liquid to thesubstrate, and the interface includes a second processing unit thatapplies cleaning processing to the substrate with a fluid nozzle thatsupplies a fluid mixture containing a liquid and a gas onto thesubstrate after exposure processing by the exposure device and atransport device that transports the substrate between the processingsection, the exposure device, and the second processing unit.

In the substrate processing apparatus, the processing liquid is appliedto the substrate by the first processing unit, and then the substrate istransported to the exposure device by the transport device. Thesubstrate is subjected to the exposure processing by the exposuredevice, and then transported to the second processing unit in theinterface by the transport device. The substrate is subjected to thecleaning processing by the second processing unit. The substrate thathas been subjected to the cleaning processing is transported to theprocessing section by the transport device.

In this way, the substrate after the exposure processing is cleaned bythe second processing unit in the interface, and then transported to theprocessing section. In the second processing unit, the fluid mixturecontaining the gas and the liquid is supplied onto the substrate by thefluid nozzle.

In this case, the fluid mixture discharged from the fluid nozzlecontains fine droplets, so that any contaminants attached on the surfaceof the substrate are stripped off, even if the surface hasirregularities. This removes the contaminants on the surface of thesubstrate reliably. Moreover, even if the film on the substrate has lowwettability, the contaminants on the surface of the substrate arestripped off by the fine droplets. Thus, the contaminants on the surfaceof the substrate can be reliably removed. As a result of the foregoing,the substrate can be prevented from processing defects due to thecontamination after the exposure processing.

In addition, adjusting the flow rate of the gas allows adjustments to beeasily made to the detergency in cleaning the substrate. Thus, when thefilm on the substrate is prone to damage, damage to the film on thesubstrate can be prevented by weakening the detergency. Toughcontaminants on the surface of the substrate can also be removedreliably by strengthening the detergency. By adjusting the detergency inthis way according to the properties of the film on the substrate andthe degree of contamination, it is possible to prevent damage to thefilm on the substrate while allowing the substrate to be cleanedreliably.

(15)

The second processing unit may apply the cleaning processing to thesubstrate by supplying a fluid mixture containing an inert gas and acleaning liquid from the fluid nozzle.

The use of the inert gas prevents a chemical influence upon the film onthe substrate while allowing the contaminants on the surface of thesubstrate to be removed more reliably. As a result, the substrate can besufficiently prevented from processing defects due to the contaminationafter the exposure processing.

(16)

The second processing unit may apply drying processing to the substrateafter the cleaning processing to the substrate.

In this way, the substrate after the exposure processing is subjected tothe cleaning and drying processings by the second processing unit in theinterface, and then transported to the processing section. This preventsa liquid attached on the substrate during the exposure processing orcleaning processing of the substrate from dropping in the substrateprocessing apparatus. As a result, the substrate processing apparatuscan be prevented from operational troubles.

In addition, after the exposure, the components of the processing liquidon the substrate can be reliably prevented from eluting in the liquidremaining on the substrate. As a result, the exposure pattern formed onthe substrate can be prevented from deformation.

(17)

The second processing unit may include an inert gas supplier thatapplies drying processing to the substrate by supplying an inert gasonto the substrate. The use of the inert gas prevents a chemicalinfluence upon the film on the substrate while allowing the substrate tobe dried reliably.

(18)

The fluid nozzle may function as the inert gas supplier. In this case,the inert gas is supplied onto the substrate from the fluid nozzle toapply drying processing to the substrate. This obviates the need toprovide the inert gas supplier separately from the fluid nozzle. As aresult, the cleaning and drying processings can be reliably applied tothe substrate with a simple structure.

(19)

The second processing unit may further include a substrate holdingdevice that holds the substrate substantially horizontally, and arotation-driving device that rotates the substrate held on the substrateholding device about an axis vertical to the substrate.

In the second processing unit, the substrate is held on the substrateholding device substantially horizontally, and the substrate is rotatedabout the axis vertical to the substrate by the rotation-driving device.Further, the fluid mixture containing the inert gas and the cleaningliquid is supplied onto the substrate from the fluid nozzle, followed bythe supply of the inert gas from the inert gas supplier.

In this case, since the substrate is rotated as the fluid mixturecontaining the inert gas and the cleaning liquid is supplied onto thesubstrate, the fluid mixture on the substrate is moved toward theperipheral portion of the substrate by the centrifugal force, andsplashed away. Accordingly, the deposits of particles and the likeremoved by the cleaning liquid can be reliably prevented from remainingon the substrate. In addition, since the substrate is rotated as theinert gas is supplied onto the substrate, the fluid mixture remaining onthe substrate after the cleaning of the substrate is efficientlyremoved. In this way, the deposits of particles and the like can bereliably prevented from remaining on the substrate while the substratecan be dried reliably. Accordingly, after the exposure, the componentsof the processing liquid on the substrate can be reliably prevented fromeluting in the processing liquid remaining on the substrate. As aresult, the exposure pattern formed on the substrate can be preventedfrom deformation reliably.

(20)

The second processing unit may supply the inert gas so that the fluidmixture supplied onto the substrate from the fluid nozzle is removedfrom the substrate as the fluid mixture moves outwardly from the centerof the substrate.

This prevents the fluid mixture from remaining on the center of thesubstrate, which prevents the generation of dry marks on the surface ofthe substrate reliably. In addition, the components of the processingliquid on the substrate can be reliably prevented from eluting in thefluid mixture remaining on the substrate. Accordingly, the exposurepattern formed on the substrate can be prevented from deformation morereliably.

(21)

The second processing unit may further include a rinse liquid supplierthat supplies a rinse liquid onto the substrate, after the supply of thefluid mixture from the fluid nozzle and before the supply of the inertgas from the inert gas supplier.

This allows the fluid mixture to be cleaned away by the rinse liquid,making it possible to prevent the deposits of particles and the likefrom remaining on the substrate more reliably.

(22)

The fluid nozzle may function as the rinse liquid supplier. Thisobviates the need to provide the rinse liquid supplier separately fromthe fluid nozzle. As a result, the cleaning and drying processings canbe reliably applied to the substrate with a simple structure.

(23)

The second processing unit may supply the inert gas so that the rinseliquid supplied onto the substrate from the rinse liquid supplier isremoved from the substrate as the rinse liquid moves outwardly from thecenter of the substrate.

This prevents the rinse liquid from remaining on the center of thesubstrate, which reliably prevents the generation of dry marks on thesurface of the substrate. In addition, after the exposure, thecomponents of the processing liquid on the substrate can be reliablyprevented from eluting in the rinse liquid remaining on the substrate.Accordingly, the exposure pattern formed on the substrate can bereliably prevented from deformation.

(24)

The fluid nozzle may have a liquid flow passage through which a liquidflows, a gas flow passage through which a gas flows, a liquid dischargeport having an opening that communicates with the liquid flow passage,and a gas discharge port that is provided near the liquid discharge portand having an opening that communicates with the gas flow passage.

In this case, the liquid flows through the liquid flow passage anddischarged from the liquid discharge port, while the gas flows throughthe gas flow passage and discharged from the gas discharge port. Theliquid and the gas are mixed outside the fluid nozzle. A mist-like fluidmixture is thus generated.

In this way, the fluid mixture is generated by mixing the liquid and thegas outside the fluid nozzle. This obviates the need to provide spacefor mixing the liquid and the gas inside the fluid nozzle. As a result,the size of the fluid nozzle can be reduced.

(25)

A substrate processing method according to yet another aspect of thepresent invention, for processing a substrate in a substrate processingapparatus that is arranged adjacent to an exposure device and comprisesa processing section that includes a processing unit and an interfacethat includes a transport device and a second processing unit, comprisesthe steps of applying a processing liquid to the substrate by the firstprocessing unit in the processing section, transporting the substratefrom the processing section to the exposure device by means of thetransport device in the interface, transporting the substrate afterexposure processing by the exposure device to the second processing unitby means of the transport device in the interface, cleaning thesubstrate by the second processing unit in the interface using a fluidnozzle that supplies a fluid mixture containing a liquid and a gas, andtransporting the substrate cleaned by the second processing unit in theinterface to the processing section by means of the transport device.

In the substrate processing method, the processing liquid is applied tothe substrate by the first processing unit in the processing section.After this, the substrate is transported to the exposure device by thetransport device in the interface. The substrate that has been subjectedto the exposure processing by the exposure device is transported to thesecond processing unit in the interface by the transport device. At thetime, the substrate is cleaned in the second processing unit bysupplying the fluid mixture containing the liquid and the gas onto thesubstrate from the fluid nozzle. The cleaned substrate is transported tothe processing section by the transport device.

In this way, the substrate after the exposure processing is cleanedfirst in the second processing unit in the interface by supplying thefluid mixture containing the gas and the liquid onto the substrate fromthe fluid nozzle.

In this case, the fluid mixture discharged from the fluid nozzlecontains fine droplets, so that any contaminants attached on the surfaceof the substrate are stripped off, even if the surface hasirregularities. This removes the contaminants on the surface of thesubstrate reliably. Moreover, even if the film on the substrate has lowwettability, the contaminants on the surface of the substrate arestripped off by the fine droplets. Thus, the contaminants on the surfaceof the substrate can be reliably removed. As a result of the foregoing,the substrate can be prevented from processing defects due to thecontamination after the exposure processing.

In addition, adjusting the flow rate of the gas allows adjustments to beeasily made to the detergency in cleaning the substrate. Thus, when thefilm on the substrate is prone to damage, damage to the film on thesubstrate can be prevented by weakening the detergency. Toughcontaminants on the surface of the substrate can also be removedreliably by strengthening the detergency. By adjusting the detergency inthis way according to the properties of the film on the substrate andthe degree of contamination, it is possible to prevent damage to thefilm on the substrate while allowing the substrate to be cleanedreliably.

(26)

The method may further comprise the step of drying the substrate by thesecond processing unit, after the step of cleaning the substrate by thesecond processing unit and before the step of transporting the substratecleaned by the second processing unit to the processing section by meansof the transport device.

In this way, the substrate after the exposure processing is subjected tothe cleaning and drying processings in the second processing unit in theinterface, and then transported to the processing section. This preventsa liquid attached to the exposure processing or cleaning processing ofthe substrate from dropping in the substrate processing apparatus. As aresult, the substrate processing apparatus can be prevented fromoperational troubles.

In addition, after the exposure, the components of the processing liquidon the substrate can be reliably prevented from eluting in the liquidremaining on the substrate. As a result, the exposure pattern formed onthe substrate can be prevented from deformation.

The foregoing and other objects, features, aspects and advantages of thepresent invention will become more apparent from the following detaileddescription of the present invention when taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view of a substrate processing apparatus according to afirst embodiment of the invention;

FIG. 2 is a side view of the substrate processing apparatus in FIG. 1that is seen from the +X direction;

FIG. 3 is a side view of the substrate processing apparatus in FIG. 1that is seen from the −X direction;

FIG. 4 is a diagram for use in illustrating the configuration of thedrying processing unit;

FIGS. 5 (a), 5 (b), and 5 (c) are diagrams for use in illustrating theoperation of the drying processing unit;

FIG. 6 is a schematic diagram of a nozzle in which a nozzle for cleaningprocessing and a nozzle for drying processing are formed integrally;

FIG. 7 is a schematic diagram showing another example of the nozzle fordrying processing;

FIGS. 8 (a), 8 (b), and 8 (c) are diagrams for use in illustrating amethod of applying drying processing to a substrate using the nozzle inFIG. 7;

FIG. 9 is a schematic diagram showing another example of the nozzle fordrying processing;

FIG. 10 is a schematic diagram showing another example of the dryingprocessing unit;

FIG. 11 is a diagram for use in illustrating a method of applying dryingprocessing to the substrate using the drying processing unit in FIG. 10;

FIG. 12 is a diagram for use in illustrating the configuration andoperation of the interface transport mechanism;

FIG. 13 is a longitudinal cross section showing an example of theinternal structure of a two-fluid nozzle for use in cleaning and dryingprocessings; and

FIGS. 14 (a), 14 (b), and 14 (c) are diagrams for use in illustrating amethod of applying drying processing to the substrate using thetwo-fluid nozzle in FIG. 13.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

A substrate processing apparatus according to embodiments of theinvention will be described below with reference to the drawings. Asubstrate as used in the specification includes a semiconductorsubstrate, a substrate for a liquid crystal display, a substrate for aplasma display, a glass substrate for a photomask, a substrate for anoptical disk, a substrate for a magnetic disk, a substrate for amagneto-optical disk, and a substrate for a photomask.

(1) First Embodiment

(1-1) Configuration of Substrate Processing Apparatus

FIG. 1 is a plan view of a substrate processing apparatus according to afirst embodiment of the invention.

FIG. 1 and each of the subsequent drawings is accompanied by the arrowsthat indicate X, Y, and Z directions perpendicular to one another, forclarification of positions. The X and Y directions are perpendicular toeach other in a horizontal plane, and the Z direction corresponds to thevertical direction. In each of the directions, the direction toward anarrow is defined as +direction, and the opposite direction is defined as−direction. The rotation direction about the Z direction is defined as θdirection.

As shown in FIG. 1, the substrate processing apparatus 500 includes anindexer block 9, an anti-reflection film processing block 10, a resistfilm processing block 11, a development processing block 12, and aninterface block 13. An exposure device 14 is arranged adjacent to theinterface block 13. The exposure device 14 applies exposure processingto substrates W by a liquid immersion method.

Each of the indexer block 9, anti-reflection film processing block 10,resist film processing block 11, development processing block 12, andinterface block 13 will hereinafter be referred to as a processingblock.

The indexer block 9 includes a main controller (controller) 30 forcontrolling the operation of each processing block, a plurality ofcarrier platforms 60, and an indexer robot IR. The indexer robot IR hasa hand IRH for receiving and transferring the substrates W.

The anti-reflection film processing block 10 includes thermal processinggroups 100, 101 for anti-reflection film, a coating processing group 70for anti-reflection film, and a first central robot CR1. The coatingprocessing group 70 is arranged opposite to the thermal processinggroups 100, 101 with the first central robot CR1 therebetween. The firstcentral robot CR1 has hands CRH1, CRH2 provided one above the other forreceiving and transferring the substrates W.

A partition wall 15 is arranged between the indexer block 9 and theanti-reflection film processing block 10 for shielding an atmosphere.The partition wall 15 has substrate platforms PASS1, PASS2 providedclosely one above the other for receiving and transferring thesubstrates W between the indexer block 9 and the anti-reflection filmprocessing block 10. The upper substrate platform PASS1 is used intransferring the substrates W from the indexer block 9 to theanti-reflection film processing block 10, and the lower substrateplatform PASS2 is used in transferring the substrates W from theanti-reflection film processing block 10 to the indexer block 9.

Each of the substrate platforms PASS1, PASS2 has an optical sensor (notshown) for detecting the presence or absence of a substrate W. Thisenables a determination to be made whether or not a substrate W is onthe substrate platform PASS1, PASS2. In addition, each of the substrateplatforms PASS1, PASS2 has a plurality of support pins secured thereto.Note that each of substrate platforms PASS3 to PASS10 mentioned belowsimilarly has such optical sensor and support pins.

The resist film processing block 11 includes thermal processing groups110, 111 for resist film, a coating processing group 80 for resist film,and a second central robot CR2. The coating processing group 80 isarranged opposite to the thermal processing groups 110, 111 with thesecond central robot CR2 therebetween. The second central robot CR2 hashands CRH3, CRH4 provided one above the other for receiving andtransferring the substrates W.

A partition wall 16 is arranged between the anti-reflection filmprocessing block 10 and the resist film processing block 11 forshielding an atmosphere. The partition wall 16 has substrate platformsPASS3, PASS4 provided closely one above the other for receiving andtransferring the substrates W between the anti-reflection filmprocessing block 10 and the resist film processing block 11. The uppersubstrate platform PASS3 is used in transferring the substrates W fromthe anti-reflection film processing block 10 to the resist filmprocessing block 11. The lower substrate platform PASS4 is used intransferring the substrates W from the resist film processing block 11to the anti-reflection film processing block 10.

The development processing block 12 includes thermal processing groups120, 121 for development, a development processing group 90, and a thirdcentral robot CR3. The thermal processing group 121, adjacent to theinterface block 13, comprises substrate platforms PASS7, PASS8 asdescribed below. The development processing group 90 is arrangedopposite to the thermal processing groups 120, 121 with the thirdcentral robot CR3 therebetween. The third central robot CR3 has handsCRH5, CRH6 provided one above the other for receiving and transferringthe substrates W.

A partition wall 17 is arranged between the resist film processing block11 and the development processing block 12 for shielding an atmosphere.The partition wall 17 has substrate platforms PASS5, PASS6 providedclosely one above the other for receiving and transferring thesubstrates W between the resist film processing block 11 and thedevelopment processing block 12. The upper substrate platform PASS5 isused in transferring the substrates W from the resist film processingblock 11 to the development processing block 12, and the lower substrateplatform PASS6 is used in transferring the substrates W from thedevelopment processing block 12 to the resist film processing block 11.

The interface block 13 includes a fourth central robot CR4, a bufferSBF, an interface transport mechanism IFR, edge exposure units EEW, anda drying processing group 95. Return buffers RBF1, RBF2 and substrateplatforms PASS9, PASS10 mentioned below are provided under the edgeexposure units EEW. The fourth central robot CR4 has hands CRH7, CRH8provided one above the other for receiving and transferring thesubstrates W.

The interface transport mechanism IFR has a hand H5 and a hand H6 forreceiving and transferring the substrates W. The interface transportmechanism IFR exchanges the substrates W between the substrate platformPASS9 and the exposure device 14, between the exposure device 14 and thedrying processing group 95, and between the drying processing group 95and the substrate platform PASS10. The interface transport mechanism IFRwill be described in detail below.

In the substrate processing apparatus 500 of the embodiment, the indexerblock 9, the anti-reflection film processing block 10, resist filmprocessing block 11, development processing block 12, and interfaceblock 13 are sequentially arranged in parallel along the Y direction.

FIG. 2 is a side view of the substrate processing apparatus 500 in FIG.1 that is seen from the +X direction.

The coating processing group 70 in the anti-reflection film processingblock 10 (see FIG. 1) includes a vertical stack of three coating unitsBARC. Each of the coating units BARC comprises a spin chuck 71 forrotating a substrate W while holding the substrate Win a horizontalattitude by suction, and a supply nozzle 72 for supplying coating liquidfor an anti-reflection film to the substrate W held on the spin chuck71.

The coating processing group 80 in the resist film processing block 11(see FIG. 1) includes a vertical stack of three coating units RES. Eachof the coating units RES comprises a spin chuck 81 for rotating asubstrate W while holding the substrate W in a horizontal attitude bysuction, and a supply nozzle 82 for supplying coating liquid for aresist film to the substrate W held on the spin chuck 81.

The development processing group 90 in the development processing block12 includes a vertical stack of five development processing units DEV.Each of the development processing units DEV comprises a spin chuck 91for rotating a substrate W while holding the substrate W in a horizontalattitude by suction, and a supply nozzle 92 for supplying developmentliquid to the substrate W held on the spin chuck 91.

The interface block 13 includes, on the development processing block 12side thereof, a vertical stack of the two edge exposure units EEW, thereturn buffers RBF1, RBF2, and the substrate platforms PASS9, PASS10 aswell as the fourth central robot CR4. Each of the edge exposure unitsEEW comprises a spin chuck 98 for rotating a substrate W while holdingthe substrate W in a horizontal attitude by suction, and a lightirradiator 99 for subjecting a peripheral edge of the substrate W heldon the spin chuck 98 to exposure.

The interface block 13 also includes, on the exposure device 14 sidethereof, the drying processing group 95 as well as the interfacetransport mechanism IFR and the buffer SBF (see FIG. 1). The dryingprocessing group 95 includes a vertical stack of the two dryingprocessing units DRY. The drying processing units DRY apply cleaning anddrying processings to the substrates W. The drying processing units DRYwill be described in detail below.

FIG. 3 is a side view of the substrate processing apparatus 500 in FIG.1 that is seen from the −X direction.

In the anti-reflection film processing block 10, the thermal processinggroup 100 includes a vertical stack of two thermal processing units PHPeach having an interface unit (hereinafter simply referred to as thermalprocessing units) and three hot plates HP, and the thermal processinggroup 101 includes a vertical stack of two adhesion agent coatingprocessing units AHL and four cooling plates CP. The thermal processinggroup 100 also includes a local controller LC on top thereof forcontrolling the temperatures of the thermal processing units PHP and thehot plates HP, and the thermal processing group 101 also includes alocal controller LC on top thereof for controlling the temperatures ofthe adhesion agent coating processing units AHL and the cooling platesCP.

In the resist film processing block 11, the thermal processing group 110includes a vertical stack of six thermal processing units PHP, and thethermal processing group 111 includes a vertical stack of four coolingplates CP. The thermal processing group 110 also includes a localcontroller LC on top thereof for controlling the temperatures of thethermal processing units PHP, and the thermal processing group 111 alsoincludes a local controller LC on top thereof for controlling thetemperatures of the cooling plates CP.

In the development processing block 12, the thermal processing group 120includes a vertical stack of four hot plates HP and four cooling platesCP, and the thermal processing group 121 includes a vertical stack offive thermal processing units PHP, substrate platforms PASS7, PASS8, anda cooling plate CP. The thermal processing group 120 also includes alocal controller LC on top thereof for controlling the temperatures ofthe hot plates HP and the cooling plates CP, and the thermal processinggroup 121 also includes a local controller LC for controlling thetemperatures of the thermal processing units PHP and the cooling plateCP.

(1-2) Operation of Substrate Processing Apparatus

The operation of the substrate processing apparatus 500 in thisembodiment will be described.

Carriers C for storing the substrates W in multiple stages are mountedon the carrier platforms 60, respectively, in the indexer block 9. Theindexer robot IR takes out a substrate W yet to be processed which isstored in a carrier C using the hand IRH for receiving and transferringthe substrates W. Then, the indexer robot IR moves in the ±X directionwhile rotating in the ±0 direction to transfer the unprocessed substrateW onto the substrate platform PASS1.

Although FOUPs (Front Opening Unified Pods) are adopted as the carriersC in this embodiment, SMIF (Standard Mechanical Inter Face) pods or OCs(Open Cassettes) that expose stored substrates W to outside air may alsobe used, for example. In addition, although linear-type transport robotsthat move their hands forward or backward by sliding them linearly to asubstrate W are used as the indexer robot IR, the first central robotCR1 to the fourth central robot CR4, and the interface transportmechanism IFR, multi-joint type transport robots that linearly movetheir hands forward and backward by moving their joints may also beused.

The unprocessed substrate W that has been transferred onto the substrateplatform PASS1 is received by the hand CRH1 of the first central robotCR1 in the anti-reflection film processing block 10. The first centralrobot CR1 carries the substrate W to the thermal processing group 100 or101 with the hand CRH1. After this, the first central robot CR1 takesout the thermally treated substrate W from the thermal processing group100 or 101 with the hand CRH2, and then carries the substrate W to thecoating processing group 70. The coating processing group 70 forms acoating of an anti-reflection film over a lower portion of a photoresistfilm using a coating unit BARC, in order to reduce potential standingwaves and halation generated during exposure.

The first central robot CR1 subsequently takes out the substrate W afterthe coating processing from the coating processing group 70 with thehand CRH1, and carries the substrate W to the thermal processing group100 or 101.

Then, the first central robot CR1 takes out the thermally treatedsubstrate W from the thermal processing group 100 or 101 with the handCRH2, and transfers the substrate W to the substrate platform PASS3.

The substrate W on the substrate platform PASS3 is received by the handCRH3 of the second central robot CR2 in the resist film processing block11. The second central robot CR2 carries the substrate W to the thermalprocessing group 110 or 111 with the hand CRH3. The second central robotCR2 then takes out the thermally treated substrate W from the thermalprocessing group 110 or 111 with the hand CRH4, and transfers thesubstrate W to the coating processing group 80. The coating processinggroup 80 forms a coating of a photoresist film over the substrate Wcoated with the anti-reflection film by a coating unit RES.

After this, the second central robot CR2 takes out the substrate W afterthe coating processing from the coating processing group 80 with thehand CRH3, and carries the substrate to the thermal processing group 110or 111.

Then, the second central robot CR2 takes out the thermally treatedsubstrate W from the thermal processing group 110 or 111 with the handCRH4, and transfers the substrate W onto the substrate platform PASS5.

The substrate Won the substrate platform PASS5 is received by the handCRH5 of the third central robot CR3 in the development processing block12. The third central robot CR3 transfers the substrate W onto thesubstrate platform PASS7 with the hand CRH5. The substrate W on thesubstrate platform PASS7 is received by the upper hand CRH7 of thefourth central robot CR4 in the interface block 13. The fourth centralrobot CR4 transfers the substrate W to an edge exposure unit EEW withthe hand CRH7. The edge exposure unit EEW applies exposure processing tothe peripheral portion of the substrate W.

Then, the fourth central robot CR4 takes out the substrate W after theedge exposure processing from the edge exposure unit EEW with the handCHR7. The fourth central robot CR4 subsequently transfers the substrateW onto the substrate platform PASS9 with the hand CHR7.

The substrate W on the substrate platform PASS9 is carried into theexposure device 14 by the interface transport mechanism IFR. Afterexposure processing has been applied to the substrate W by the exposuredevice 14, the interface transport mechanism IFR receives the substrateW from the exposure device 14, and carries the received substrate W tothe drying processing unit DRY in the drying processing group 95. Theinterface transport mechanism IFR will be described below.

After cleaning and drying processings have been applied to the substrateW by the drying processing unit DRY, the interface transport mechanismIFR transfers the substrate W onto the substrate platform PASS10.

The substrate W on the substrate platform PASS10 is received by thelower hand CRH8 of the fourth central robot CR4 in the interface block13. The fourth central robot CR4 carries the substrate W into thethermal processing group 121 in the development processing block 12 withthe hand CRH8. The thermal processing group 121 applies thermaltreatment to the substrate W. After this, the fourth central robot CR4takes out the substrate W from the thermal processing group 121 with thehand CRH8, and transfers the substrate W onto the substrate platformPASS8.

The substrate Won the substrate platform PASS8 is received by the handCRH6 of the third central robot CR3 in the development processing block12. The third central robot CR3 carries the substrate W into thedevelopment processing group 90 with the hand CRH6. The developmentprocessing group 90 applies development processing to the exposedsubstrate W.

After this, the third central robot CR3 takes out the substrate W afterthe development processing from the development processing group 90 withthe hand CRH5, and transfers the substrate W to the thermal processinggroup 120.

Then, the third central robot CR3 takes out the thermally treatedsubstrate W from the thermal processing group 120 with the hand CRH6,and transfers the substrate W onto the substrate platform PASS6 in theresist film processing block 11.

If the development processing group 90 is temporarily not capable ofapplying development processing to the substrate W by, e.g., a failure,the substrate W may temporarily be stored in the return buffer RBF1 inthe interface block 13 after the thermal treatment in the thermalprocessing group 121.

The substrate W on the substrate platform PASS6 is transferred onto thesubstrate platform PASS4 by the hand CRH4 of the second central robotCR2 in the resist film processing block 11. The substrate W on thesubstrate platform PASS4 is transferred onto the substrate platformPASS2 by the hand CRH2 of the first central robot CR1 in theanti-reflection film processing block 10.

The substrate W on the substrate platform PASS2 is stored in a carrier Cby the indexer robot IR in the indexer block 9. Each of the processingsto the substrate W in the substrate processing apparatus is thuscompleted.

(1-3) Drying Processing Unit

The aforementioned drying processing units DRY are now described indetail with reference to the drawings.

(1-3a) Configuration of Drying Processing Unit

The configuration of each of the drying processing units DRY is firstdescribed. FIG. 4 is a diagram for use in illustrating the configurationof the drying processing unit DRY.

As shown in FIG. 4, the drying processing unit DRY comprises a spinchuck 621 for rotating a substrate W about the vertical rotation axispassing through the center of the substrate W while horizontally holdingthe substrate W.

The spin chuck 621 is secured to an upper end of a rotation shaft 625,which is rotated via a chuck rotation-driving mechanism 636. An airsuction passage (not shown) is formed in the spin chuck 621. With thesubstrate W being mounted on the spin chuck 621, air inside the airsuction passage is discharged, so that a lower surface of the substrateW is sucked onto the spin chuck 621 by vacuum, and the substrate W isheld in a horizontal attitude.

A first rotation motor 660 is arranged outside the spin chuck 621. Thefirst rotation motor 660 is connected to a first rotation shaft 661. Thefirst rotation shaft 661 is coupled to a first arm 662, which extends inthe horizontal direction, and whose end is provided with a nozzle 650for cleaning processing.

The first rotation shaft 661 is rotated by the first rotation motor 660,so that the first arm 662 swings. This causes the nozzle 650 to moveabove the substrate W held on the spin chuck 621.

A supply pipe 663 for cleaning processing is arranged so as to passthrough the inside of the first rotation motor 660, first rotation shaft661, and first arm 662. The supply pipe 663 is connected to a cleaningliquid supply source R1 and a rinse liquid supply source R2 through avalve Va and a valve Vb, respectively. Controlling the opening andclosing of the valves Va, Vb allows the selection of the processingliquid supplied to the supply pipe 663 and adjustments of the amountthereof. In the configuration of FIG. 4, when the valve Va is opened,cleaning liquid is supplied to the supply pipe 663, and when the valveVb is opened, rinse liquid is supplied to the supply pipe 663.

The cleaning liquid or the rinse liquid is supplied to the nozzle 650through the supply pipe 663 from the cleaning liquid supply source R1 orthe rinse liquid supply source R2. The cleaning liquid or the rinseliquid is thus supplied to a surface of the substrate W. Examples of thecleaning liquid may include pure water, a pure water solution containinga complex (ionized), or a fluorine-based chemical solution. Examples ofthe rinse liquid may include pure water, carbonated water, hydrogenwater, electrolytic ionic water, and HFE (hydrofluoroether).

A second rotation motor 671 is arranged outside the spin chuck 621. Thesecond rotation motor 671 is connected to a second rotation shaft 672.The second rotation shaft 672 is coupled to a second arm 673, whichextends in the horizontal direction, and whose end is provided with anozzle 670 for drying processing.

The second rotation shaft 672 is rotated by the second rotation motor671, so that the second arm 673 swings. This causes the nozzle 670 tomove above the substrate W held on the spin chuck 621.

A supply pipe 674 for drying processing is arranged so as to passthrough the inside of the second rotation motor 671, second rotationshaft 672, and second arm 673. The supply pipe 674 is connected to aninert gas supply source R3 through a valve Vc. Controlling the openingand closing of the valve Vc allows adjustments to be made to the amountof the inert gas supplied to the supply pipe 674.

The inert gas is supplied to the nozzle 670 through the supply pipe 674from the inert gas supply source R3. The inert gas is thus supplied tothe surface of the substrate W. Nitrogen gas (N₂), for example, may beused as the inert gas.

When supplying the cleaning liquid or the rinse liquid onto the surfaceof the substrate W, the nozzle 650 is positioned above the substrate.When supplying the inert gas onto the surface of the substrate W, thenozzle 650 is retracted to a predetermined position.

When supplying the cleaning liquid or the rinse liquid onto the surfaceof the substrate W, the nozzle 670 is retracted to a predeterminedposition. When supplying the inert gas onto the surface of the substrateW, the nozzle 670 is positioned above the substrate W.

The substrate W held on the spin chuck 621 is housed in a processing cup623. A cylindrical partition wall 633 is provided inside the processingcup 623. A discharge space 631 is formed so as to surround the spinchuck 621 for discharging the processing liquid (i.e., cleaning liquidor rinse liquid) used in processing the substrate W. Also, a liquidrecovery space 632 is formed between the processing cup 623 and thepartition wall 633, so as to surround the discharge space 631, forrecovering the processing liquid used in processing the substrate W.

The discharge space 631 is connected with a discharge pipe 634 fordirecting the processing liquid to a liquid discharge processing device(not shown), while the liquid recovery space 632 is connected with arecovery pipe 635 for directing the processing liquid to a recoveryprocessing device (not shown).

A guard 624 is provided above the processing cup 623 for preventing theprocessing liquid on the substrate W from splashing outward. The guard624 is configured to be rotation-symmetric with respect to the rotationshaft 625. A liquid discharge guide groove 641 with a V-shaped crosssection is formed in a circular shape inwardly of an upper end portionof the guard 624.

Also, a liquid recovery guide 642 having an inclined surface thatinclines down outwardly is formed inwardly of a lower portion of theguard 624. A partition wall housing groove 643 for receiving thepartition wall 633 in the processing cup 623 is formed in the vicinityof the upper end of the liquid recovery guide 642.

This guard 624 is provided with a guard lifting mechanism (not shown)composed of a ball screw mechanism or the like. The guard liftingmechanism lifts and lowers the guard 624 between a recovery position inwhich the liquid recovery guide 642 is positioned opposite to outeredges of the substrate W held on the spin chuck 621 and a dischargeposition in which the liquid discharge guide groove 641 is positionedopposite to the outer edges of the substrate W held on the spin chuck621. When the guard 624 is in the recovery position (i.e., the positionof the guard shown in FIG. 4), the processing liquid splashed out fromthe substrate W is directed by the liquid recovery guide 642 to theliquid recovery space 632, and then recovered through the recovery pipe635. On the other hand, when the guard 624 is in the discharge position,the processing liquid splashed out from the substrate W is directed bythe liquid discharge guide groove 641 to the discharge space 631, andthen discharged through the discharge pipe 634. With the above-describedconfiguration, discharge and recovery of the processing liquid isperformed.

(1-3b) Operation of Drying Processing Unit

The processing operation of the drying processing unit DRY having theabove-described configuration is next described. Note that the operationof each component in the drying processing unit DRY described below iscontrolled by the main controller 30 in FIG. 1.

When the substrate W is initially carried into the drying processingunit DRY, the guard 624 is lowered, and the interface transportmechanism IFR in FIG. 1 places the substrate W onto the spin chuck 621.The substrate W on the spin chuck 521 is held by suction.

Next, the guard 624 moves to the aforementioned discharge position, andthe nozzle 650 moves above the center of the substrate W. Then, therotation shaft 625 rotates, causing the substrate W held on the spinchuck 621 to rotate. After this, the cleaning liquid is discharged ontothe top surface of the substrate W from the nozzle 650. This providescleaning of the substrate W. Note that the supply of the cleaning liquidonto the substrate W may be executed by a soft spray method using atwo-fluid nozzle. An example of the drying processing unit DRY using atwo-fluid nozzle will be described in the second embodiment.

After the elapse of a predetermined time, the supply of the cleaningliquid is stopped, and the rinse liquid is discharged from the nozzle650. The cleaning liquid on the substrate W is thus cleaned away.

After the elapse of another predetermined time, the rotation speed ofthe rotation shaft 625 decreases. This reduces the amount of the rinseliquid that is shaken off by the rotation of the substrate W, resultingin the formation of a liquid layer L of the rinse liquid over the entiresurface of the substrate W, as shown in FIG. 5 (a). Alternatively, therotation of the rotation shaft 625 may be stopped to form the liquidlayer L over the entire surface of the substrate W.

The embodiment employs the configuration in which the nozzle 650 is usedfor supplying both the cleaning liquid and the rinse liquid, so as tosupply both the cleaning liquid and the rinse liquid from the nozzle650. However, a configuration may also be employed in which nozzles areseparately provided for supplying the cleaning liquid and the rinseliquid.

In order to prevent the rinse liquid from flowing to the back surface ofthe substrate W during the supply of the rinse liquid, pure water may besupplied to the back surface of the substrate W from a back rinsingnozzle (not shown).

Note that when using pure water as the cleaning liquid for cleaning thesubstrate W, it is not necessary to supply the rinse liquid.

The supply of the rinse liquid is subsequently stopped, and the nozzle650 retracts to the predetermined position while the nozzle 670 movesabove the center of the substrate W. The inert gas is subsequentlydischarged from the nozzle 670. This causes the rinse liquid around thecenter of the substrate W to move toward a peripheral portion of thesubstrate W, leaving the liquid layer L only on the peripheral portion,as shown in FIG. 5 (b).

Next, as the number of revolutions of the rotation shaft 625 (see FIG.4) increases, the nozzle 670 gradually moves from above the center ofthe substrate W to above the peripheral portion thereof, as shown inFIG. 5 (c). This causes a great centrifugal force acting on the liquidlayer L on the substrate W while allowing the inert gas to be sprayedtoward the entire surface of the substrate W, thereby ensuring theremoval of the liquid layer L on the substrate W. As a result, thesubstrate W can be dried reliably.

Then, the supply of the inert gas is stopped, and the nozzle 670retracts to the predetermined position while the rotation of therotation shaft 625 is stopped. After this, the guard 624 is lowered, andthe interface transport mechanism IFR in FIG. 1 carries the substrate Wout of the drying processing unit DRY. The processing operation of thedrying processing unit DRY is thus completed.

It is preferred that the position of the guard 624 during cleaning anddrying processings is suitably changed according to the necessity of therecovery or discharge of the processing liquid.

(1-3c) Another Example of Drying Processing Unit

Although the drying processing unit DRY shown in FIG. 4 includes thenozzle 650 for cleaning processing and the nozzle 670 for dryingprocessing separately, the nozzle 650 and the nozzle 670 may also beformed integrally, as shown in FIG. 6. This obviates the need to moveeach of the nozzle 650 and the nozzle 670 individually during thecleaning or drying processing to the substrate W, thereby simplifyingthe driving mechanism.

A nozzle 770 for drying processing as shown in FIG. 7 may also be usedinstead of the nozzle 670 for drying processing.

The nozzle 770 in FIG. 7 extends vertically downward, and also hasbranch pipes 771, 772 that extend obliquely downward from sides thereof.A gas discharge port 770 a is formed at the lower end of the branch pipe771, a gas discharge port 770 b is formed at the lower end of the nozzle770, and a gas discharge port 770 c is formed at the lower end of thebranch pipe 772, each for discharging an inert gas. The discharge port770 b discharges an inert gas vertically downward, and the dischargeports 770 a, 770 c each discharge an inert gas obliquely downward, asindicated by the arrows in FIG. 7. That is to say, the nozzle 770discharges the inert gas so as to increase the spraying area downwardly.

Now, a drying processing unit DRY using the nozzle 770 for dryingprocessing applies drying processing to the substrate W as will now bedescribed.

FIGS. 8 (a), 8 (b), 8 (c) are diagrams for use in illustrating a methodof applying drying processing to the substrate W using the nozzle 770.

Initially, a liquid layer L is formed on the surface of the substrate Wby the method as described in FIG. 6, and then the nozzle 770 movesabove the center of the substrate W, as shown in FIG. 8 (a). After this,an inert gas is discharged from the nozzle 770. This causes the rinseliquid on the center of the substrate W to move to the peripheralportion of the substrate W, leaving the liquid layer L only on theperipheral portion of the substrate W, as shown in FIG. 8 (b). At thetime, the nozzle 770 is brought close to the surface of the substrate Wso as to reliably move the rinse liquid present on the center of thesubstrate W.

Next, as the number of revolutions of the rotation shaft 625 (see FIG.4) increases, the nozzle 770 moves upward as shown in FIG. 8 (c). Thiscauses a great centrifugal force acting on the liquid layer L on thesubstrate W while increasing the area to which the inert gas is sprayedon the substrate W. As a result, the liquid layer L on the substrate Wis reliably removed. Note that the nozzle 770 can be moved up and downby lifting and lowering the second rotation shaft 672 via a rotationshaft lifting mechanism (not shown) provided to the second rotationshaft 672 in FIG. 4.

Alternatively, a nozzle 870 for drying processing as shown in FIG. 9 maybe used instead of the nozzle 770. The nozzle 870 in FIG. 9 has adischarge port 870 a whose diameter gradually increases downward. Thisdischarge port 870 a discharges an inert gas vertically downward andobliquely downward as indicated by the arrows in FIG. 9. That is,similarly to the nozzle 770 in FIG. 7, the nozzle 870 discharges theinert gas so as to increase the spraying area downwardly. Consequently,drying processing similar to that using the nozzle 770 can be applied tothe substrate W using the nozzle 870.

A drying processing unit DRYa as shown in FIG. 10 may also be usedinstead of the drying processing unit DRY shown in FIG. 4.

The drying processing unit DRYa in FIG. 10 is different from the dryingprocessing unit DRY in FIG. 4 as described below.

The drying processing unit DRYa in FIG. 10 includes above the spin chuck621 a disk-shaped shield plate 682 having an opening through the centerthereof. A support shaft 689 extends vertically downward from around anend of an arm 688, and the shield plate 682 is mounted at a lower end ofthe support shaft 689 so as to oppose the top surface of the substrate Wheld on the spin chuck 621.

A gas supply passage 690 that communicates with the opening of theshield plate 682 is inserted into the inside of the support shaft 689. Anitrogen gas (N₂), for example, is supplied into the gas supply passage690.

The arm 688 is connected with a shield plate lifting mechanism 697 and ashield plate rotation-driving mechanism 698. The shield plate liftingmechanism 697 lifts and lowers the shield plate 682 between a positionclose to the top surface of the substrate W held on the spin chuck 621and a position upwardly away from the spin chuck 621.

During the drying processing to the substrate W in the drying processingunit DRYa in FIG. 10, with the shield plate 628 brought close to thesubstrate W as shown in FIG. 11, an inert gas is supplied to clearancebetween the substrate W and the shield plate 682 from the gas supplypassage 690. This allows the inert gas to be efficiently supplied fromthe center of the substrate W to the peripheral portion thereof, therebyensuring the removal of the liquid layer L on the substrate W.

Although in the above-described embodiment, the substrate W is subjectedto drying processing by spin drying in the drying processing unit DRY,the substrate W may be subjected to drying processing by other methodssuch as a reduced pressure drying method or an air knife drying method.

Although in the above-described embodiment, the inert gas is suppliedfrom the nozzle 670 with the liquid layer L of the rinse liquid beingformed, the following method may be applied when the liquid layer L ofthe rinse liquid is not formed or the rinse liquid is not used. That is,the liquid layer of cleaning liquid is shaken off once by rotating thesubstrate W, and an inert gas is then immediately supplied from thenozzle 670 to thoroughly dry the substrate W.

(1-3d) Effects of Drying Processing Unit

As described above, in the interface block 13 of the substrateprocessing apparatus 500 according to the embodiment, the substrate Whaving a photoresist film thereon is carried into the exposure device 14by the interface transport mechanism IFR, and then the substrate W afterexposure processing is carried into the drying processing unit DRY bythe interface transport mechanism IFR, where the substrate W issubjected to drying processing.

In this way, a liquid attached to the substrate W in the exposure device14 can be prevented from dropping in the substrate processing apparatus500. As a result, the substrate processing apparatus 500 is preventedfrom operational troubles.

In addition, the drying processing unit DRY applies the dryingprocessing to the substrate W by spraying the inert gas to the substrateW from the center to the peripheral portion while rotating the substrateW. This reliably removes the cleaning liquid and the rinse liquid on thesubstrate W, so as to reliably prevent particles and the like in theatmosphere from attaching to the cleaned substrate W. This preventscontamination of the substrate W reliably while preventing thegeneration of dry marks on the surface of the substrate W.

In addition, the cleaning liquid and the rinse liquid are reliablyprevented from remaining on the cleaned substrate W, so that the resistcomponents are reliably prevented from eluting in the cleaning liquidand the rinse liquid during the transport of the substrate W from thedrying processing unit DRY to the development processing group 90. Thisprevents the deformation of an exposure pattern formed on the resistfilm. As a result, the accuracy of line width can be reliably preventedfrom decreasing during the development processing.

Further, the drying processing unit DRY applies the cleaning processingto the substrate W before the drying processing. Thus, even if a liquidattaches to the substrate W during exposure, and particles and the likein the atmosphere adhere to the substrate W during the transport of thesubstrate W from the exposure device 14 to the drying processing unitDRY, the deposits can be removed reliably.

As a result of the foregoing, the substrate W can be reliably preventedfrom processing defects.

(1-4) Interface Transport Mechanism

The interface transport mechanism IFR is next described. FIG. 12 is adiagram for use in illustrating the configuration and operation of theinterface transport mechanism IFR.

(1-4a) Configuration and Operation of Interface Transport Mechanism

The configuration of the interface transport mechanism IFR is firstdescribed. As shown in FIG. 12, a hand support base 24 is mounted to asecuring base 21 of the interface transport mechanism IFR so as torotate in the ±θ direction while moving up and down in the ±Z direction.The hand support base 24 is coupled to a motor M2 in the securing base21 through a rotation shaft 25, and rotated by the motor M2. Two handsH5, H6 for holding the substrate W in a horizontal attitude are mountedto the hand support base 24 one above the other, so as to move forwardand backward.

The operation of the interface transport mechanism IFR is described. Theoperation of the interface transport mechanism IFR is controlled by themain controller 30 in FIG. 1.

The interface transport mechanism IFR initially rotates the hand supportbase 24 while lifting the hand support base 24 in the +Z direction, toallow the upper hand H5 to enter the substrate platform PASS9. When thehand H5 has received the substrate W in the substrate platform PASS9,the interface transport mechanism IFR retracts the hand H5 from thesubstrate platform PASS9.

The interface transport mechanism IFR subsequently rotates the handsupport base 24 while lifting or lowering the hand support base 24 inthe ±Z direction. Then, the interface transport mechanism IFR allows thehand H5 holding the substrate W to enter a substrate inlet 14 a in theexposure device 14 (see FIG. 1). After carrying the substrate W into thesubstrate inlet 14 a, the interface transport mechanism IFR retracts thehand H5 from the substrate inlet 14 a.

Then, the interface transport mechanism IFR allows the lower hand H6 toenter a substrate outlet 14 b in the exposure device 14 (see FIG. 1).When the hand H6 has received the substrate W after exposure processingin the substrate outlet 14 b, the interface transport mechanism IFRretracts the hand H6 from the substrate outlet 14 b.

After this, the interface transport mechanism IFR rotates the handsupport base 24 while lifting or lowering the hand support base 24 inthe ±Z direction. At the time, the interface transport mechanism IFRallows the hand H6 holding the substrate W to enter either of the twodrying processing units DRY. After carrying the substrate W into thedrying processing unit DRY, the interface transport mechanism IFRretracts the hand H6 from the drying processing unit DRY.

At this time, the interface transport mechanism IFR lifts or lowers thehand support base 24 in the ±Z direction, to allow the hand H5 to enterthe other one of the two drying processing units DRY. When the hand H5has received the substrate W after drying processing in the dryingprocessing unit DRY, the interface transport mechanism IFR retracts thehand H5 from the drying processing unit DRY.

Then, the interface transport mechanism IFR rotates the hand supportbase 24 while lifting or lowering the hand support base 24 in the ±Zdirection. At the time, the interface transport mechanism IFR allows thehand H5 holding the substrate W to enter the substrate platform PASS10to transfer the substrate W into the substrate platform PASS10.

If the drying processing unit DRY is not capable of receiving thesubstrate W during the transport of the substrate W from the exposuredevice 14 to the drying processing unit DRY, the substrate W istemporarily stored in the return buffer unit RBF2.

Also, if the exposure device 14 is not capable of receiving thesubstrate W during the transport of the substrate W from the substrateplatform PASS9 to the exposure device 14, the substrate W is stored inthe buffer SBF.

(1-4b) Effects of Interface Transport Mechanism

As described above, in this embodiment, the hand H5 of the interfacetransport mechanism IFR is used when transporting the substrate W fromthe substrate platform PASS9 to the exposure device 14 and from thedrying processing units DRY to the substrate platform PASS10, while thehand H6 is used when transporting the substrate W from the exposuredevice 14 to the drying processing units DRY. That is, the hand H6 isused for transporting the substrate W to which a liquid is attachedafter the exposure processing, while the hand H5 is used fortransporting the substrate W to which no liquid is attached before theexposure processing. This prevents the liquid on the substrate W fromattaching to the hand H5.

Moreover, since the hand H6 is arranged below the hand H5, even if aliquid drops from the hand H6 and the substrate W held thereon, theliquid will not attach to the hand H5 and the substrate W held thereon.

This prevents a liquid from attaching to the substrate W before exposureprocessing, so as to prevent contamination of the substrate W due to theattachment of particles and the like in the atmosphere. This preventsthe occurrence of operational troubles in the exposure device 14 due todegradation in the resolution performance and the like.

(1-4c) Modifications of First Embodiment

In this embodiment, the substrates W are carried from the substrateplatform PASS9 to the exposure device 14, from the exposure device 14 tothe drying processing units DRY, and from the drying processing unitsDRY to the substrate platform PASS10 by the single interface transportmechanism IFR. However, the substrates W may also be carried using aplurality of interface transport mechanisms.

Moreover, the number of the drying processing units DRY is not limitedto two, and the number may suitably be changed according to theprocessing speed of each processing block.

In addition, the operation and configuration of the interface transportmechanism IFR may be modified according to the positions of thesubstrate inlet 14 a and the substrate outlet 14 b in the exposuredevice 14. For example, when the substrate inlet 14 a and the substrateoutlet 14 b in the exposure device 14 are not positioned opposite to thesubstrate platforms PASS9, PASS10, the securing base 21 may be mademovable.

(2) Second Embodiment

(2-1) Drying Processing Unit Using Two-Fluid Nozzle

A substrate processing apparatus according to a second embodiment isdifferent from the substrate processing apparatus according to the firstembodiment in using a two-fluid nozzle shown in FIG. 13 in the dryingprocessing unit DRY, instead of the nozzle 650 for cleaning processingand the nozzle 670 for drying processing in FIG. 4. The configuration ofthe substrate processing apparatus according to the second embodiment isotherwise similar to that of the substrate processing apparatusaccording to the first embodiment.

FIG. 13 is a longitudinal cross section showing an example of theinternal structure of the two-fluid nozzle 950 for use in cleaning anddrying processings. The two-fluid nozzle 950 is capable of selectivelydischarging a gas, a liquid, and a fluid mixture of the gas and theliquid.

The two-fluid nozzle 950 in this embodiment is so-called an external-mixtype. The external-mix type two-fluid nozzle 950 shown in FIG. 13comprises an inner body portion 311 and an outer body portion 312. Theinner body portion 311 is composed of, e.g., quartz, and the outer bodyportion 312 is composed of a fluororesin such as PTFE(polytetrafluoroethylene).

A liquid passage 311 b is formed along the central axis of the innerbody portion 311. The liquid passage 311 b is provided with the supplypipe 663 shown in FIG. 4 for cleaning processing. Cleaning liquid orrinse liquid supplied from the supply pipe 663 is thus introduced intothe liquid passage 311 b.

A liquid discharge port 311 a that communicates with the liquid passage311 b is formed at a lower end of the inner body portion 311. The innerbody portion 311 is inserted into the outer body portion 312. Upper endsof the inner body portion 311 and the outer body portion 312 are joinedtogether, while lower ends thereof are not joined.

A cylindrical gas passage 312 b is formed between the inner body portion311 and the outer body portion 312. A gas discharge port 312 a thatcommunicates with the gas passage 312 b is formed at the lower end ofthe outer body portion 312. The supply pipe 674 shown in FIG. 4 fordrying processing is mounted to a peripheral wall of the outer bodyportion 312, so as to communicate with the gas passage 312 b. An inertgas supplied from the supply pipe 674 is thus introduced into the gaspassage 312 b.

The diameter of the gas passage 312 decreases downward in the vicinityof the gas discharge port 312 a. As a result, the velocity of flow ofthe inert gas is accelerated, and the inert gas is discharged from thegas discharge port 312 a.

The cleaning liquid discharged from the liquid discharge port 311 a andthe inert gas discharged from the gas discharge port 312 a are mixedoutside near the lower end of the two-fluid nozzle 950 to generate amist-like fluid mixture that contains fine droplets of the cleaningliquid.

FIGS. 14 (a), 14 (b), 14 (c) are diagrams for use in illustrating amethod of applying drying processing to the substrate W using thetwo-fluid nozzle 950 in FIG. 13.

The substrate W is initially held on the spin chuck 621 by suction, asshown in FIG. 4, and rotates together with the rotation of the rotationshaft 625. The rotation speed of the rotation shaft 625 is, e.g., about500 rpm.

In this state, as shown in FIG. 14 (a), the two-fluid nozzle 950discharges the mist-like fluid mixture of the cleaning liquid and theinert gas onto the top surface of the substrate W while gradually movingfrom above the center of the substrate W to above the peripheral portionthereof. In this way, the fluid mixture is sprayed onto the entiresurface of the substrate W from the two-fluid nozzle 950 to clean thesubstrate W.

Since the fluid mixture discharged from the two-fluid nozzle 950contains fine droplets of the cleaning liquid, any contaminants attachedon the surface of the substrate W can be stripped off, even if thesurface has irregularities. The contaminants on the surface of thesubstrate W can thus be reliably removed. Moreover, even if the films onthe substrate W have low wettability, the fine droplets of the cleaningliquid strip off the contaminants on the surface of the substrate W, sothat the contaminants can be reliably removed from the surface of thesubstrate W.

In addition, adjusting the flow rate of the inert gas allows adjustmentsto be easily made to the detergency in cleaning the substrate W. Thus,when the organic films (i.e., a resist film and a resist cover film) onthe substrate W are prone to damage, damage to the organic films on thesubstrate W can be prevented by weakening the detergency. Toughcontaminants on the surface of the substrate W can also be removedreliably by strengthening the detergency. By adjusting the detergency inthis way according to the properties of the organic films on thesubstrate W and the degree of contamination, it is possible to preventdamage to the organic films on the substrate W while cleaning thesubstrate W reliably.

Next, the supply of the fluid mixture is stopped, and the rotation speedof the rotation shaft 625 decreases while the rinse liquid is dischargedfrom the two-fluid nozzle 960 onto the substrate W, as shown in FIG. 14(b). The rotation speed of the rotation shaft 625 is, e.g., about 10rpm. A liquid layer L of the rinse liquid is thus formed on the entiresurface of the substrate W. Alternatively, the rotation of the rotationshaft 625 may be stopped to form the liquid layer L on the entiresurface of the substrate W. When pure water is used as the cleaningliquid in the fluid mixture for cleaning the substrate W, the supply ofthe rinse liquid may be omitted.

After the formation of the liquid layer L, the supply of the rinseliquid is stopped. Then, the inert gas is discharged onto the substrateW from the two-fluid nozzle 950, as shown in FIG. 14 (c). This causesthe cleaning liquid on the center of the substrate W to move to theperipheral portion of the substrate W, leaving the liquid layer L onlyon the peripheral portion.

Then, the rotation speed of the rotation shaft 625 increases. Therotation speed of the rotation shaft 625 is, e.g., about 100 rpm. Thiscauses a great centrifugal force acting on the liquid layer L on thesubstrate W, allowing the removal of the liquid layer L on the substrateW. As a result, the substrate W is dried.

The two-fluid nozzle 950 may gradually move from above the center of thesubstrate W to above the peripheral portion thereof when removing theliquid layer L on the substrate W. This allows the inert gas to besprayed to the entire surface of the substrate W, which ensures theremoval of the liquid layer L on the substrate W. As a result, thesubstrate W can be reliably dried.

(2-2) Other Example of Drying Processing Unit Using Two-Fluid Nozzle

Although the two-fluid nozzle 950 in FIG. 13 is used to supply the rinseliquid to the substrate W, a separate nozzle may also be used forsupplying the rinse liquid to the substrate W.

Moreover, although the two-fluid nozzle 950 in FIG. 13 is used to supplythe inert gas to the substrate W when removing the liquid layer L on thesubstrate W, a separate nozzle may also be used for supplying the inertgas to the substrate W.

(2-3) Effects of Second Embodiment

In the interface block 13 of the substrate processing apparatus 500according to the second embodiment, the substrate W having a photoresistfilm thereon is carried into the exposure device 14 by the interfacetransport mechanism IFR, and then the substrate W after exposureprocessing is carried into the drying processing unit DRY by theinterface transport mechanism IFR. The substrate W is subjected tocleaning processing by the drying processing unit DRY. In this case, theresidual droplets attached on the substrate W after the exposureprocessing, the eluate from the organic films on the substrate W, andthe like are removed by supplying the fluid mixture of the cleaningliquid and the inert gas from the two-fluid nozzle 950 in the dryingprocessing unit DRY.

Since the fluid mixture discharged from the two-fluid nozzle 950contains fine droplets of the cleaning liquid, the contaminants attachedon the surface of the substrate W is removed by the fine droplets of thecleaning liquid, even if the surface of the substrate W hasirregularities. The contaminants on the surface of the substrate W arethus reliably removed. Moreover, even if the films on the substrate Whave low wettability, the fine droplets of the cleaning liquid removethe contaminants on the surface of the substrate W, so that thecontaminants can be reliably removed from the surface of the substrateW. As a result of the foregoing, the substrate can be prevented fromprocessing defects due to the contamination after the exposureprocessing.

In addition, adjusting the flow rate of the inert gas allows adjustmentsto be easily made to the detergency in cleaning the substrate W.Accordingly, when the organic films on the substrate (i.e, resist filmand resist cover film) are prone to damage, damage to the organic filmson the substrate W can be prevented by weakening the detergency. Toughcontaminants on the surface of the substrate W can also be removedreliably by strengthening the detergency. By adjusting the detergency inthis way according to the properties of the organic films on thesubstrate W and the degree of contamination, it is possible to preventdamage to the organic films on the substrate W while cleaning thesubstrate W reliably.

Moreover, the drying processing unit DRY applies the drying processingto the substrate W after the cleaning processing. This prevents a liquidattached to the substrate W during the cleaning processing from droppingin the substrate processing apparatus 500. As a result, the substrateprocessing apparatus 500 can be prevented from operational troubles.

Furthermore, the drying processing unit DRY applies the dryingprocessing to the substrate W by spraying the inert gas to the substrateW from the center to the peripheral portion thereof while rotating thesubstrate W. This reliably removes the cleaning liquid and the rinseliquid on the substrate W, so as to prevent particles and the like inthe atmosphere from attaching to the cleaned substrate W. This preventscontamination of the substrate W reliably while preventing thegeneration of dry marks on the surface of the substrate W.

Furthermore, the cleaning liquid and the rinse liquid are reliablyprevented from remaining on the cleaned substrate W, so that the resistcomponents are reliably prevented from eluting in the cleaning liquidand the rinse liquid during the transport of the substrate W from thedrying processing unit DRY to the development processing group 90. Thisprevents the deformation of an exposure pattern formed on the resistfilm. As a result, the accuracy of line width can be reliably preventedfrom decreasing during the development processing.

As a result of the foregoing, the substrate W can be reliably preventedfrom processing defects.

In the second embodiment, the external-mix type two-fluid nozzle 950 isused. This external-mix type two-fluid nozzle 950 generates the fluidmixture by mixing the cleaning liquid and the inert gas outside thetwo-fluid nozzle 950. The inert gas and the cleaning liquid flow throughthe separate flow passages, respectively, in the two-fluid nozzle 950.This prevents the cleaning liquid from remaining in the gas passage 312b, allowing the inert gas to be discharged independently from thetwo-fluid nozzle 950. Also, the rinse liquid can be dischargedindependently from the two-fluid nozzle 950 by supplying the rinseliquid from the supply pipe 663. This allows the fluid mixture, theinert gas, and the rinse liquid to be selectively discharged from thetwo-fluid nozzle 950.

Furthermore, the use of the two-fluid nozzle 950 obviates the need toprovide nozzles for supplying the cleaning liquid or the rinse liquid tothe substrate W and for supplying the inert gas to the substrate Wseparately. This provides reliable cleaning and drying of the substrateW with a simple structure.

(3) Correspondence between Each Claim Element and Each Component inEmbodiments

In the embodiment, each of the anti-reflection film processing block 10,the resist film processing block 11, and the development processingblock 12 corresponds to a processing section; the interface block 13corresponds to an interface, each of the coating units RES correspondsto a first processing unit; each of the drying processing units DRY,DRYa corresponds to a second processing unit; each of the edge exposureunits EEW corresponds to a third processing unit; each of the platformsPASS9, PASS10 corresponds to a platform; the fourth central robot CR4corresponds to a first transport unit; and the interface transportmechanism IFR corresponds to a second transport unit.

The hand H5 corresponds to a first holder, and the hand H6 correspondsto a second holder.

The spin chuck 621 corresponds to a substrate holding device; therotation shaft 625 and the chuck rotation-driving mechanism 636correspond to a rotation-driving device; the nozzle 650 for cleaningprocessing corresponds to a cleaning liquid supplier and a rinse liquidsupplier; and each of the nozzles 670, 770, 870 for drying processingcorresponds to an inert gas supplier.

The two-fluid nozzle 950 corresponds to a fluid nozzle; the liquidpassage 311 b corresponds to a liquid flow passage; and the gas passage312 b corresponds to a gas flow passage.

Although the present invention has been described and illustrated indetail, it is clearly understood that the same is by way of illustrationand example only and is not to be taken by way of limitation, the spiritand scope of the present invention being limited only by the terms ofthe appended claims.

1. A substrate processing apparatus that is arranged adjacent to anexposure device, comprising: a processing section for applyingprocessing to a substrate; and an interface for exchanging the substratebetween said processing section and said exposure device, wherein saidprocessing section includes a first processing unit that applies aprocessing liquid to the substrate, and said interface includes: asecond processing unit that dries the substrate after exposureprocessing by said exposure device; and a transport device thattransports the substrate between said processing unit, said exposuredevice, and said second processing unit.
 2. The substrate processingapparatus according to claim 1, wherein said second processing unitdries the substrate by supplying an inert gas onto the substrate.
 3. Thesubstrate processing apparatus according to claim 1, wherein saidinterface further includes a third processing unit that applies givenprocessing to the substrate and a platform on which the substrate istemporarily mounted, and said transport device includes: a firsttransport unit that transports the substrate between said processingsection, said third processing unit, and said platform; and a secondtransport unit that transports the substrate between said platform, saidsecond processing unit, and said exposure device, and wherein saidsecond transport unit transports the substrate from said exposure deviceto said second processing unit.
 4. The substrate processing apparatusaccording to claim 3, wherein said second transport unit comprises afirst holder and a second holder each for holding the substrate, whereinsaid second transport unit holds the substrate with said first holderwhen transporting the substrate before exposure processing by saidexposure device, and said second transport unit holds the substrate withsaid second holder when transporting the substrate after exposureprocessing by said exposure device.
 5. The substrate processingapparatus according to claim 4, wherein said second holder is providedbelow said first holder.
 6. The substrate processing apparatus accordingto claim 3, wherein said third processing unit includes an edge exposureunit for subjecting a peripheral portion of the substrate to exposure.7. The substrate processing apparatus according to claim 1, wherein saidsecond processing unit further cleans the substrate before drying thesubstrate.
 8. The substrate processing apparatus according to claim 7,wherein said second processing unit comprises: a substrate holdingdevice that holds the substrate substantially horizontally; arotation-driving device that rotates the substrate held on saidsubstrate holding device about an axis vertical to the substrate; acleaning liquid supplier that supplies a cleaning liquid onto thesubstrate held on said substrate holding device; and an inert gassupplier that supplies an inert gas onto the substrate after thecleaning liquid has been supplied onto the substrate by said cleaningliquid supplier.
 9. The substrate processing apparatus according toclaim 8, wherein said inert gas supplier supplies the inert gas so thatthe cleaning liquid supplied onto the substrate from said cleaningliquid supplier is removed from the substrate as the cleaning liquidmoves outwardly from the center of the substrate.
 10. The substrateprocessing apparatus according to claim 8, wherein said secondprocessing unit further comprises a rinse liquid supplier that suppliesa rinse liquid onto the substrate after the supply of the cleaningliquid from said cleaning liquid supplier and before the supply of theinert gas from said inert gas supplier.
 11. The substrate processingapparatus according to claim 10, wherein said inert gas suppliersupplies the inert gas so that the rinse liquid supplied onto thesubstrate from said rinse liquid supplier is removed from the substrateas the rinse liquid moves outwardly from the center of the substrate.12. A substrate processing method for processing a substrate in asubstrate processing apparatus that is arranged adjacent to an exposuredevice and comprises a processing section that includes a firstprocessing unit and an interface that includes a transport device and asecond processing unit, comprising the steps of: applying a processingliquid to the substrate by said first processing unit in said processingsection; transporting the substrate from said processing section to saidexposure device to said second processing unit by means of saidtransport device in said interface; transporting the substrate afterexposure processing by said exposure device by means of said transportdevice in said interface; drying the substrate by said second processingunit in said interface; and transporting the substrate dried by saidsecond processing unit in said interface to said processing section bymeans of said transport device.
 13. The substrate processing methodaccording to claim 12, further comprising the step of cleaning thesubstrate by said second processing unit, after said step oftransporting the substrate to said second processing unit by means ofsaid transport device and before said step of drying the substrate bysaid second processing unit.
 14. A substrate processing apparatus thatis arranged adjacent to an exposure device, comprising: a processingsection for applying processing to a substrate; and an interface forexchanging the substrate between said processing section and saidexposure device, wherein said processing section includes a firstprocessing unit that applies a processing liquid to the substrate, andsaid interface includes: a second processing unit that applies cleaningprocessing to the substrate with a fluid nozzle that supplies a fluidmixture containing a liquid and a gas onto the substrate after exposureprocessing by said exposure device; and a transport device thattransports the substrate between said processing section, said exposuredevice, and said second processing unit.
 15. The substrate processingmethod according to claim 14, wherein said second processing unitapplies said cleaning processing to the substrate by supplying a fluidmixture containing an inert gas and a cleaning liquid from said fluidnozzle.
 16. The substrate processing method according to claim 14,wherein said second processing unit applies drying processing to thesubstrate after said cleaning processing to the substrate.
 17. Thesubstrate processing method according to claim 16, wherein said secondprocessing unit includes an inert gas supplier that applies dryingprocessing to the substrate by supplying an inert gas onto thesubstrate.
 18. The substrate processing method according to claim 17,wherein said fluid nozzle functions as said inert gas supplier.
 19. Thesubstrate processing method according to claim 17, wherein said secondprocessing unit further includes: a substrate holding device that holdsthe substrate substantially horizontally; and a rotation-driving devicethat rotates the substrate held on said substrate holding device aboutan axis vertical to the substrate.
 20. The substrate processing methodaccording to claim 17, wherein said second processing unit supplies theinert gas so that the fluid mixture supplied onto the substrate fromsaid fluid nozzle is removed from the substrate as the fluid mixturemoves outwardly from the center of the substrate.
 21. The substrateprocessing method according to claim 17, wherein said second processingunit further includes a rinse liquid supplier that supplies a rinseliquid onto the substrate, after the supply of the fluid mixture fromsaid fluid nozzle and before the supply of the inert gas from said inertgas supplier.
 22. The substrate processing method according to claim 21,wherein said fluid nozzle functions as said rinse liquid supplier. 23.The substrate processing method according to claim 21, wherein saidsecond processing unit supplies the inert gas so that the rinse liquidsupplied onto the substrate from said rinse liquid supplier is removedfrom the substrate as the rinse liquid moves outwardly from the centerof the substrate.
 24. The substrate processing method according to claim14, wherein said fluid nozzle has a liquid flow passage through which aliquid flows, a gas flow passage through which a gas flows, a liquiddischarge port having an opening that communicates with said liquid flowpassage, and a gas discharge port that is provided near said liquiddischarge port and having an opening that communicates with said gasflow passage.
 25. A substrate processing method for processing asubstrate in a substrate processing apparatus that is arranged adjacentto an exposure device and comprises a processing section that includes aprocessing unit and an interface that includes a transport device and asecond processing unit, comprising the steps of: applying a processingliquid to the substrate by said first processing unit in said processingsection; transporting the substrate from said processing section to saidexposure device by means of said transport device in said interface;transporting the substrate after exposure processing by said exposuredevice to said second processing unit by means of said transport devicein said interface; cleaning the substrate by said second processing unitin said interface using a fluid nozzle that supplies a fluid mixturecontaining a liquid and a gas; and transporting the substrate cleaned bysaid second processing unit in said interface to said processing sectionby means of said transport device.
 26. The substrate processing methodaccording to claim 25, further comprising the step of drying thesubstrate by said second processing unit, after said step of cleaningthe substrate by said second processing unit and before said step oftransporting the substrate cleaned by said second processing unit tosaid processing section by means of said transport device.